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IXTH68P20T
IXTH68P20T
IXTH68P20T
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IXTH68P20T
IXTH68P20T
IXYS
MOSFET P-CH 200V 68A TO247
TO-247 (IXTH)
50489 In Stock
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Product Attributes
Type PARAMETERS
Mfr
IXYS
Package / Case
TO-247-3
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
380 nC @ 10 V
Package
Tube
Drain to Source Voltage (Vdss)
200 V
Rds On (Max) @ Id, Vgs
55mOhm @ 34A, 10V
Product Status
Active
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Series
TrenchP™
Power Dissipation (Max)
568W (Tc)
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
IXTH68
Input Capacitance (Ciss) (Max) @ Vds
33400 pF @ 25 V
Supplier Device Package
TO-247 (IXTH)
Vgs (Max)
±15V
Documents & Media
RESOURCE TYPE LINK
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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