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IXTH80N20L
IXTH80N20L
IXTH80N20L
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IXTH80N20L
IXTH80N20L
IXYS
MOSFET N-CH 200V 80A TO247
TO-247 (IXTH)
19852 In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
6160 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Base Product Number
IXTH80
Package / Case
TO-247-3
Product Status
Active
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package
Tube
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Power Dissipation (Max)
520W (Tc)
Mfr
IXYS
Drain to Source Voltage (Vdss)
200 V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Series
Linear
Rds On (Max) @ Id, Vgs
32mOhm @ 40A, 10V
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1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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