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IXTK120N65X2
IXTK120N65X2
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IXTK120N65X2
IXTK120N65X2
IXYS
MOSFET N-CH 650V 120A TO264
TO-264 (IXTK)
48299 In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Base Product Number
IXTK120
FET Type
N-Channel
Package / Case
TO-264-3, TO-264AA
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
13600 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Mounting Type
Through Hole
Supplier Device Package
TO-264 (IXTK)
FET Feature
-
Power Dissipation (Max)
1250W (Tc)
Mfr
IXYS
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Series
Ultra X2
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Vgs (Max)
±30V
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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