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IXTP05N100M
IXTP05N100M
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IXTP05N100M
IXTP05N100M
IXYS
MOSFET N-CH 1000V 700MA TO220AB
TO-220-3
7305 In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V
Drain to Source Voltage (Vdss)
1000 V
Series
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-220-3
Package
Tube
Current - Continuous Drain (Id) @ 25°C
700mA (Tc)
Vgs(th) (Max) @ Id
4.5V @ 25µA
Base Product Number
IXTP05
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
17Ohm @ 375mA, 10V
Vgs (Max)
±30V
Mfr
IXYS
FET Feature
-
Package / Case
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 10 V
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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