IXTP06N120P IXYS | Discrete Semiconductor Products

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IXTP06N120P

Part Number IXTP06N120P

Manufacturer IXYS

Description MOSFET N-CH 1200V 600MA TO220AB

Package TO-220-3

Datasheet IXTP06N120P,IXTA06N120P.pdf

Quantity

43154 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Mfr

IXYS

Series

Polar

Vgs(th) (Max) @ Id

4.5V @ 50µA

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On)

10V

Base Product Number

IXTP06

Technology

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs

13.3 nC @ 10 V

Supplier Device Package

TO-220-3

Product Status

Active

Package

Tube

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

32Ohm @ 500mA, 10V

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

600mA (Tc)

Input Capacitance (Ciss) (Max) @ Vds

270 pF @ 25 V

Vgs (Max)

±20V

FET Feature

Package / Case

TO-220-3

Mounting Type

Through Hole

Documents & Media

RESOURCE TYPE LINK

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.