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IXTP18P10T
IXTP18P10T
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IXTP18P10T
IXTP18P10T
IXYS
MOSFET P-CH 100V 18A TO220AB
TO-220-3
34569 In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Package
Tube
Supplier Device Package
TO-220-3
Vgs(th) (Max) @ Id
4.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
Mounting Type
Through Hole
Series
TrenchP™
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
83W (Tc)
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Base Product Number
IXTP18
Mfr
IXYS
Rds On (Max) @ Id, Vgs
120mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±15V
FET Type
P-Channel
Documents & Media
RESOURCE TYPE LINK
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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