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IXTP20N65X2
IXTP20N65X2
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IXTP20N65X2
IXTP20N65X2
IXYS
MOSFET N-CH 650V 20A TO220AB
TO-220
95834 In Stock
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Product Attributes
Type PARAMETERS
Series
Ultra X2
Package
Tube
Product Status
Active
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Mfr
IXYS
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 25 V
Base Product Number
IXTP20
Rds On (Max) @ Id, Vgs
185mOhm @ 10A, 10V
Mounting Type
Through Hole
Supplier Device Package
TO-220
Power Dissipation (Max)
290W (Tc)
Package / Case
TO-220-3
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Documents & Media
RESOURCE TYPE LINK
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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