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IXTP2N100P
IXTP2N100P
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IXTP2N100P
IXTP2N100P
IXYS
MOSFET N-CH 1000V 2A TO220AB
TO-220-3
96801 In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
86W (Tc)
Drain to Source Voltage (Vdss)
1000 V
Package / Case
TO-220-3
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
655 pF @ 25 V
Mfr
IXYS
Rds On (Max) @ Id, Vgs
7.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs
24.3 nC @ 10 V
Vgs(th) (Max) @ Id
4.5V @ 100µA
FET Feature
-
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
±20V
Base Product Number
IXTP2
Package
Tube
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Series
Polar
Documents & Media
RESOURCE TYPE LINK
Payment Method
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Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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