IXTP2R4N120P IXYS | Discrete Semiconductor Products

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IXTP2R4N120P

Part Number IXTP2R4N120P

Manufacturer IXYS

Description MOSFET N-CH 1200V 2.4A TO220AB

Package TO-220-3

Datasheet littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf

Quantity

79979 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Product Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

Drain to Source Voltage (Vdss)

1200 V

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

7.5Ohm @ 500mA, 10V

Mounting Type

Through Hole

Series

Polar

Gate Charge (Qg) (Max) @ Vgs

37 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1207 pF @ 25 V

Mfr

IXYS

Vgs(th) (Max) @ Id

4.5V @ 250µA

Technology

MOSFET (Metal Oxide)

FET Feature

Base Product Number

IXTP2

Package

Tube

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Documents & Media

RESOURCE TYPE LINK

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.