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IXTP52P10P
IXTP52P10P
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IXTP52P10P
IXTP52P10P
IXYS
MOSFET P-CH 100V 52A TO220AB
TO-220-3
9151 In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Package
Tube
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2845 pF @ 25 V
FET Feature
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Power Dissipation (Max)
300W (Tc)
Mfr
IXYS
Product Status
Active
Package / Case
TO-220-3
Series
PolarP™
Drain to Source Voltage (Vdss)
100 V
Rds On (Max) @ Id, Vgs
50mOhm @ 52A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Base Product Number
IXTP52
Documents & Media
RESOURCE TYPE LINK
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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