IXTP8N50PM IXYS | Discrete Semiconductor Products

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IXTP8N50PM

Part Number IXTP8N50PM

Manufacturer IXYS

Description MOSFET N-CH 500V 4A TO220AB

Package TO-220-3

Datasheet 99582.pdf

Quantity

77814 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Supplier Device Package

TO-220-3

Series

PolarHV™

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 10 V

Rds On (Max) @ Id, Vgs

800mOhm @ 4A, 10V

FET Feature

Power Dissipation (Max)

41W (Tc)

Vgs(th) (Max) @ Id

5.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Vgs (Max)

±30V

Package / Case

TO-220-3

FET Type

N-Channel

Package

Tube

Input Capacitance (Ciss) (Max) @ Vds

1050 pF @ 25 V

Mfr

IXYS

Product Status

Obsolete

Drain to Source Voltage (Vdss)

500 V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Documents & Media

RESOURCE TYPE LINK

PCN Obsolescence/ EOL

PDN_USA2018_007.pdf

PCN Design/Specification

LFPCN2020-005_07-Sep-2020.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.