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IXTQ110N10P
IXTQ110N10P
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IXTQ110N10P
IXTQ110N10P
IXYS
MOSFET N-CH 100V 110A TO3P
TO-3P
23910 In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Package / Case
TO-3P-3, SC-65-3
Mfr
IXYS
Series
Polar
Drain to Source Voltage (Vdss)
100 V
FET Feature
-
Product Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IXTQ110
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
3550 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Power Dissipation (Max)
480W (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Supplier Device Package
TO-3P
Rds On (Max) @ Id, Vgs
15mOhm @ 500mA, 10V
Documents & Media
RESOURCE TYPE LINK
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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