IXTQ280N055T IXYS | Discrete Semiconductor Products

Favorite Products

Request Free Samples

IXTQ280N055T

Part Number IXTQ280N055T

Manufacturer IXYS

Description MOSFET N-CH 55V 280A TO3P

Package TO-3P

Datasheet DS99630A(IXTH-TQ280N055T).pdf

Quantity

86827 In Stock

Fill out the form and we will contact you shortly.

Contact Information

Please send RFQ and we will contact you shortly.

Quantitiy

Contact Name* *

Email* *

Country

Company Name

Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Supplier Device Package

TO-3P

Rds On (Max) @ Id, Vgs

3.2mOhm @ 50A, 10V

Mfr

IXYS

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

9700 pF @ 25 V

Series

TrenchMV™

Package

Tube

FET Type

N-Channel

Drain to Source Voltage (Vdss)

55 V

Power Dissipation (Max)

550W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

280A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-3P-3, SC-65-3

Product Status

Obsolete

Gate Charge (Qg) (Max) @ Vgs

200 nC @ 10 V

Vgs (Max)

±20V

FET Feature

Documents & Media

RESOURCE TYPE LINK

PCN Obsolescence/ EOL

IXT_Series_30.pdf

Datasheets

DS99630A(IXTH-TQ280N055T).pdf

PCN Design/Specification

LFPCN2020-004_EMC_change_TO-3P_223-Jun-2020.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.