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IXTQ86N25T
IXTQ86N25T
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IXTQ86N25T
IXTQ86N25T
IXYS
MOSFET N-CH 250V 86A TO3P
TO-3P
58137 In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
540W (Ta)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
IXYS
Rds On (Max) @ Id, Vgs
37mOhm @ 43A, 10V
Input Capacitance (Ciss) (Max) @ Vds
5330 pF @ 25 V
Supplier Device Package
TO-3P
Technology
MOSFET (Metal Oxide)
Product Status
Active
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
FET Feature
-
Package / Case
TO-3P-3, SC-65-3
Package
Tube
Drain to Source Voltage (Vdss)
250 V
Mounting Type
Through Hole
Series
Trench
Base Product Number
IXTQ86
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
86A (Tc)
Vgs (Max)
±30V
Documents & Media
RESOURCE TYPE LINK
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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