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IXTY1R4N100P
IXTY1R4N100P
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IXTY1R4N100P
IXTY1R4N100P
IXYS
MOSFET N-CH 1000V 1.4A TO252
TO-252AA
89271 In Stock
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Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTY1
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Rds On (Max) @ Id, Vgs
11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Mfr
IXYS
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
17.8 nC @ 10 V
FET Feature
-
Vgs (Max)
±20V
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package
Tube
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Power Dissipation (Max)
63W (Tc)
Series
Polar
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Documents & Media
RESOURCE TYPE LINK
Payment Method
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Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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