IXYS IXTY1R4N60P Stock & Price

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IXTY1R4N60P

Part Number IXTY1R4N60P

Manufacturer IXYS

Description MOSFET N-CH 600V 1.4A TO252

Package TO-252AA

Datasheet IXT(P,U,Y)-1R4N60P.pdf

Quantity

14865 In Stock

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Company Name

Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Vgs (Max)

±30V

Package

Tube

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs

5.2 nC @ 10 V

FET Feature

Series

PolarHV™

Drain to Source Voltage (Vdss)

600 V

Supplier Device Package

TO-252AA

Mfr

IXYS

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

5.5V @ 25µA

Power Dissipation (Max)

50W (Tc)

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Product Status

Obsolete

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs

9Ohm @ 700mA, 10V

Input Capacitance (Ciss) (Max) @ Vds

140 pF @ 25 V

Documents & Media

RESOURCE TYPE LINK

PCN Obsolescence/ EOL

PDN-USA2018-001.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.