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IXTY2N100P
IXTY2N100P
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IXTY2N100P
IXTY2N100P
IXYS
MOSFET N-CH 1000V 2A TO252
TO-252AA
18841 In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-252AA
Package
Tube
Drain to Source Voltage (Vdss)
1000 V
Rds On (Max) @ Id, Vgs
7.5Ohm @ 500mA, 10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds
655 pF @ 25 V
Series
Polar
Vgs (Max)
±20V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Mfr
IXYS
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
24.3 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
4.5V @ 100µA
Base Product Number
IXTY2
FET Type
N-Channel
Power Dissipation (Max)
86W (Tc)
Documents & Media
RESOURCE TYPE LINK
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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