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NDT452AP
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NDT452AP
NDT452AP
POWER FIELD-EFFECT TRANSISTOR, 5
SOT-223-4
FAIRS16209-1.pdf
68774 In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Package
Bulk
Rds On (Max) @ Id, Vgs
65mOhm @ 5A, 10V
Vgs (Max)
±20V
Mfr
Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Product Status
Active
Series
-
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Vgs(th) (Max) @ Id
2.8V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
690 pF @ 15 V
Power Dissipation (Max)
3W (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)
Package / Case
TO-261-4, TO-261AA
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Supplier Device Package
SOT-223-4
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Feature
-
Documents & Media
RESOURCE TYPE LINK
Datasheets
Payment Method
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Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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