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NTMD2C02R2G
NTMD2C02R2G
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NTMD2C02R2G
NTMD2C02R2G
onsemi
MOSFET N/P-CH 20V 8SOIC
8-SOIC
ntmd2c02r2-d.pdf
3481 In Stock
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Product Attributes
Type PARAMETERS
Series
-
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 10V
Current - Continuous Drain (Id) @ 25°C
5.2A, 3.4A
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Package
Tape & Reel (TR)
FET Type
N and P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Drain to Source Voltage (Vdss)
20V
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
43mOhm @ 4A, 4.5V
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
Base Product Number
NTMD2C
Mfr
onsemi
Power - Max
2W
Documents & Media
RESOURCE TYPE LINK
Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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