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  4. Transistors - Bipolar (BJT) - Single, Pre-Biased
  5. PDTC123ES,126
PDTC123ES,126
PDTC123ES,126
PDTC123ES,126
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PDTC123ES,126
PDTC123ES,126
NXP USA Inc.
TRANS PREBIAS NPN 500MW TO92-3
TO-92-3
PDTC123E_SERIES.pdf
11314 In Stock
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Product Attributes
Type PARAMETERS
Categories
Discrete Semiconductor Products , Transistors - Bipolar (BJT) - Single, Pre-Biased
Voltage - Collector Emitter Breakdown (Max)
50 V
Power - Max
500 mW
Series
-
Current - Collector (Ic) (Max)
100 mA
Transistor Type
NPN - Pre-Biased
Package
Tape & Box (TB)
Product Status
Obsolete
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
Current - Collector Cutoff (Max)
1µA
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Mfr
NXP USA Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number
PDTC12
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Documents & Media
RESOURCE TYPE LINK
Environmental Information
NXP-REACH-STATEMENT.pdf
NXP-ROHS-DECLARATION.pdf
Datasheets
PDTC123E_SERIES.pdf
PCN Packaging
202009031G.pdf
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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