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RM8N650TI
RM8N650TI
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RM8N650TI
RM8N650TI
Rectron USA
MOSFET N-CHANNEL 650V 8A TO220F
TO-220F
30679 In Stock
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Product Attributes
Type PARAMETERS
Categories
Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
650 V
Package
Tube
Mfr
Rectron USA
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 50 V
Product Status
Active
Rds On (Max) @ Id, Vgs
450mOhm @ 4A, 10V
Power Dissipation (Max)
31.7W (Tc)
Series
-
Supplier Device Package
TO-220F
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C
8A (Tj)
Vgs(th) (Max) @ Id
3.5V @ 250µA
FET Feature
-
FET Type
N-Channel
Documents & Media
RESOURCE TYPE LINK
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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