TP65H035G4WS Transphorm

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TP65H035G4WS

Part Number TP65H035G4WS

Manufacturer Transphorm

Description GANFET N-CH 650V 46.5A TO247-3

Package TO-247-3

Datasheet TP65H035G4WS_v1.2.pdf

Quantity

19333 In Stock

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Contact Information

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Company Name

Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 400 V

FET Type

N-Channel

Package

Tube

Rds On (Max) @ Id, Vgs

41mOhm @ 30A, 10V

Operating Temperature

-55°C ~ 150°C

Supplier Device Package

TO-247-3

Mfr

Transphorm

Product Status

Active

Technology

GaNFET (Cascode Gallium Nitride FET)

Current - Continuous Drain (Id) @ 25°C

46.5A (Tc)

Vgs(th) (Max) @ Id

4.8V @ 1mA

Mounting Type

Through Hole

Package / Case

TO-247-3

FET Feature

Series

Drain to Source Voltage (Vdss)

650 V

Gate Charge (Qg) (Max) @ Vgs

22 nC @ 0 V

Power Dissipation (Max)

156W (Tc)

Base Product Number

TP65H035

Documents & Media

RESOURCE TYPE LINK

Datasheets

TP65H035G4WS_v1.2.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.