TP65H035WSQA Transphorm | Discrete Semiconductor Products

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TP65H035WSQA

Part Number TP65H035WSQA

Manufacturer Transphorm

Description GANFET N-CH 650V 47.2A TO247-3

Package TO-247-3

Datasheet tp65h035wsqa_v1-1.pdf

Quantity

67061 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs

41mOhm @ 32A, 10V

Package / Case

TO-247-3

Vgs (Max)

±20V

Current - Continuous Drain (Id) @ 25°C

47.2A (Tc)

Mounting Type

Through Hole

FET Type

N-Channel

Drain to Source Voltage (Vdss)

650 V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 400 V

Supplier Device Package

TO-247-3

Mfr

Transphorm

Drive Voltage (Max Rds On, Min Rds On)

10V

Operating Temperature

-55°C ~ 175°C (TJ)

Base Product Number

TP65H035

Gate Charge (Qg) (Max) @ Vgs

24 nC @ 10 V

Power Dissipation (Max)

187W (Tc)

Series

Automotive, AEC-Q101

Package

Tube

Technology

GaNFET (Cascode Gallium Nitride FET)

Product Status

Active

Documents & Media

RESOURCE TYPE LINK

Datasheets

tp65h035wsqa_v1-1.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.