TP65H050WS Transphorm | Discrete Semiconductor Products

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TP65H050WS

Part Number TP65H050WS

Manufacturer Transphorm

Description GANFET N-CH 650V 34A TO247-3

Package TO-247-3

Datasheet TP65H050WS.pdf

Quantity

69898 In Stock

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Product Attributes

Type PARAMETERS

Categories

Discrete Semiconductor Products , Transistors - FETs, MOSFETs - Single

Base Product Number

TP65H050

Drain to Source Voltage (Vdss)

650 V

Series

Operating Temperature

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id

4.8V @ 700µA

Power Dissipation (Max)

119W (Tc)

Mounting Type

Through Hole

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Package / Case

TO-247-3

FET Type

N-Channel

Drive Voltage (Max Rds On, Min Rds On)

12V

Rds On (Max) @ Id, Vgs

60mOhm @ 22A, 10V

Supplier Device Package

TO-247-3

Product Status

Active

Mfr

Transphorm

Technology

GaNFET (Cascode Gallium Nitride FET)

Package

Tube

Gate Charge (Qg) (Max) @ Vgs

24 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1000 pF @ 400 V

FET Feature

Documents & Media

RESOURCE TYPE LINK

Datasheets

TP65H050WS.pdf

Payment Method

Shipping

Quality Inspection

Packaging

1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.