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TPH3202LD
TPH3202LD
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TPH3202LD
TPH3202LD
Transphorm
GANFET N-CH 600V 9A 4PQFN
4-PQFN (8x8)
TPH3202LS.pdf
9926 In Stock
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Product Attributes
Type PARAMETERS
Mfr
Transphorm
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 175°C (TJ)
Series
-
Package
Tube
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Supplier Device Package
4-PQFN (8x8)
Power Dissipation (Max)
65W (Tc)
FET Type
N-Channel
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drain to Source Voltage (Vdss)
600 V
Rds On (Max) @ Id, Vgs
350mOhm @ 5.5A, 8V
Vgs (Max)
±18V
Package / Case
4-PowerDFN
Technology
GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 480 V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Mounting Type
Surface Mount
Documents & Media
RESOURCE TYPE LINK
Datasheets
PCN Obsolescence/ EOL
Payment Method
Shipping
Quality Inspection
Packaging
1. All the products will be packed in ESD anti-static protection.

2. Outside ESD packing’s label will use our company’s information.

3. We will check all the goods before shipment to ensure that all products are in original and new condition.
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