These 1 A and 2 A devices feature a small-size SlimSMA HV (DO-221AC) package, offering low capacitance and a large minimum creepage distance of 3.2 mm.
Vishay Intertechnology, Inc. (NYSE stock symbol: VSH) has announced the launch of three new third-generation 650 V and 1200 V silicon carbide (SiC) Schottky diodes in ultra-compact SlimSMA HV (DO-221AC) packages ---the 2 A VS-3C02EJ07-M3, the 1 A VS-3C01EJ12-M3, and the 2 A VS-3C02EJ12-M3. These devices feature a merged PIN Schottky (MPS) design with a minimum creepage distance of 3.2 mm, combining low capacitance charge and temperature-independent switching characteristics to enhance the efficiency of high-speed hard-switching power supply designs.

For high-voltage applications, Vishay's recently released devices feature enhanced creepage distances for improved electrical insulation performance, while their SlimSMA HV package uses a moulded compound with CTI 600 to ensure excellent electrical insulation. For space-constrained designs, these diodes are only 0.95 mm thick, compared to 2.3 mm for competing SMA and SMB package products with similar package dimensions.
Unlike silicon diodes, the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 maintain a low capacitive charge of as low as 7.2 nC at any temperature, thereby accelerating switching speed, reducing power loss, and improving efficiency in high-frequency applications. Additionally, these devices have virtually no recovery tail current, further improving efficiency, while their MPS structure reduces the forward voltage drop to 1.30 V.
The VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 operate at temperatures up to +175°C and are typically used as bootstrap diodes, anti-parallel diodes, and PFC diodes in DC/DC and AC/DC converters in server power supplies; power generation and storage systems; industrial drives and tools; and X-ray generators. These devices have a positive temperature coefficient, facilitating parallel operation in these applications.
These diodes comply with RoHS standards, are halogen-free, have a humidity sensitivity rating of 1, comply with J-STD-020 standards, and meet JESD 201 Class 2 whisker test requirements.
Device Specifications Table:
| 产品编号 | VS-3C01EJ12-M3 | VS-3C02EJ07-M3 | VS-3C02EJ12-M3 |
| IF (A) | 1 | 2 | 2 |
| VR (V) | 1200 | 650 | 1200 |
| (VF at IF (V)) | 1.35 | 1.3 | 1.35 |
| IR at VR at 175 ℃(μA) | 4.5 | 2 | 5 |
| QC (nC) | 7.5 | 7.2 | 13 |
| 配置 |
SlimSMA HV (DO-221AC)
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| 封装 |
单个
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The new SiC diode is now available for sampling and has entered mass production, with a delivery cycle of 14 weeks.
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